050-7464 rev a 3-2004 apt60gu30b_s typical performance curves to-247 g c e apt60gu30b APT60GU30S 300v the power mos 7 ? igbt is a new generation of high voltage power igbts. using punch through technology this igbt is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. ? low conduction loss ? ssoa rated ? low gate charge ? ultrafast tail current shutoff maximum ratings all ratings: t c = 25c unless otherwise specified. caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com static electrical characteristics min typ max 300 3 4.5 6 1.5 2.0 1.5 250 2500 100 characteristic / test conditions collector-emitter breakdown voltage (v ge = 0v, i c = 250a) gate threshold voltage (v ce = v ge , i c = 1ma, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 30a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 30a, t j = 125c) collector cut-off current (v ce = v ces , v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = v ces , v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) symbol bv ces v ge(th) v ce(on) i ces i ges unit volts a na symbol v ces v ge v gem i c1 i c2 i cm ssoa p d t j ,t stg t l apt60gu30b_s 300 20 30 100 60 200 200a @ 300v 417 -55 to 150 300 unit volts amps watts c parameter collector-emitter voltage gate-emitter voltage gate-emitter voltage transient continuous collector current @ 7 t c = 25c continuous collector current @ t c = 100c pulsed collector current 1 @ t c = 150c switching safe operating area @ t j = 150c total power dissipation operating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. g c e power mos 7 ? igbt d 3 pak g c e
050-7464 rev a 3-2004 apt60gu30b_s dynamic characteristics symbol c ies c oes c res v gep q g q ge q gc ssoa t d(on) t r t d(off) t f e on1 e on2 e off t d(on) t r t d(off) t f e on1 e on2 e off test conditions capacitance v ge = 0v, v ce = 25v f = 1 mhz gate charge v ge = 15v v ce = 150v i c = 30a t j = 150c, r g = 5 ?, v ge = 15v, l = 100h,v ce = 300v inductive switching (25c) v cc = 200v v ge = 15v i c = 30a r g = 20 ? t j = +25c inductive switching (125c) v cc = 200v v ge = 15v i c = 30a r g = 20 ? t j = +125c characteristic input capacitance output capacitance reverse transfer capacitance gate-to-emitter plateau voltage total gate charge 3 gate-emitter charge gate-collector ("miller ") charge switching safe operating area turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 min typ max 2990 275 21 7.0 100 20 30 200 48 20 215 85 tbd 130 240 48 20 250 155 tbd 200 340 unit pf v nc a ns j ns j unit c/w gm min typ max 0.30 n/a 5.90 characteristic junction to case (igbt) junction to case (diode) package weight symbol r jc r jc w t thermal and mechanical characteristics 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and fred leakages 3 see mil-std-750 method 3471. 4e on1 is the clamped inductive turn-on-energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on loss. (see figure 24.) 5e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switchi ng loss. a combi device is used for the clamping diode as shown in the e on2 test circuit. (see figures 21, 22.) 6e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. (see figures 21, 23.) 7 countinous current limited by package lead temperature. apt reserves the right to change, without notice, the specifications and information contained herein.
050-7464 rev a 3-2004 apt60gu30b_s typical performance curves v ce , collecter-to-emitter voltage (v) v ce , collecter-to-emitter voltage (v) figure 1, output characteristics(v ge = 15v) figure 2, output characteristics (v ge = 10v) v ge , gate-to-emitter voltage (v) gate charge (nc) figure 3, transfer characteristics figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 5, on state voltage vs gate-to- emitter voltage figure 6, on state voltage vs junction temperature t j , junction temperature (c) t c , case temperature (c) figure 7, breakdown voltage vs. junction temperature figure 8, dc collector current vs case temperature bv ces , collector-to-emitter breakdown v ce , collector-to-emitter voltage (v) i c , collector current (a) i c , collector current (a) voltage (normalized) i c, dc collector current(a) v ce , collector-to-emitter voltage (v) v ge , gate-to-emitter voltage (v) i c , collector current (a) 0 0.5 1 1.5 2 0 0.5 1 1.5 2 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 5 6 7 8 9 10 11 12 13 14 15 16 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150 t j = 25c. 250s pulse test <0.5 % duty cycle t c =-55c t c =125c t c =25c v ce = 240v v ce = 150v v ce = 60v v ge = 10v. 250s pulse test <0.5 % duty cycle v ge = 15v. 250s pulse test <0.5 % duty cycle v ge = 15v. 250s pulse test <0.5 % duty cycle i c = 30a t j = 25c t j = 25c t j = -55c t j = 125c t c =-55c t c =25c t c =125c 250s pulse test <0.5 % duty cycle i c = 15a i c = 30a i c = 60a i c= 60a i c= 30a i c= 15a 60 50 40 30 20 10 0 200 180 160 140 120 100 80 60 40 20 0 4 3.5 3 2.5 2 1.5 1 0.5 0 1.2 1.15 1.10 1.05 1.0 0.95 0.9 0.85 0.8 60 50 40 30 20 10 0 16 14 12 10 8 6 4 2 0 2 1.5 1.0 0.5 0 160 140 120 100 80 60 40 20 0 lead temperature limited
050-7464 rev a 3-2004 apt60gu30b_s t j = 125c, v ge = 10v or 15v t j = 25c, v ge = 10v or 15v v ce = 200v r g = 20 ? l = 100 h v ge = 15v,t j =125c v ge = 15v v ge = 15v,t j =25c t j = 25c, v ge = 10v or 15v i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 9, turn-on delay time vs collector current figure 10, turn-off delay time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 11, current rise time vs collector current figure 12, current fall time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 13, turn-on energy loss vs collector current figure 14, turn off energy loss vs collector current r g , gate resistance (ohms) t j , junction temperature (c) figure 15, switching energy losses vs. gate resistance figure 16, switching energy losses vs junction temperature t j = 25 or 125c,v ge = 15v switching energy losses (j) e on2 , turn on energy loss (j) t r, rise time (ns) t d(on) , turn-on delay time (ns) switching energy losses (j) e off , turn off energy loss (j) t f, fall time (ns) t d (off) , turn-off delay time (ns) t j =125c, v ge =15v t j = 125c, v ge = 10v or 15v t j = 25c, v ge =15v v ce = 200v t j = 25c, t j =125c r g = 20 ? l = 100 h 10 20 30 40 50 60 70 10 20 30 40 50 60 70 10 20 30 40 50 60 70 10 20 30 40 50 60 70 10 20 30 40 50 60 70 10 20 30 40 50 60 70 5 10 15 20 25 30 35 40 45 50 0 25 50 75 100 125 60 50 40 30 20 10 0 60 50 40 30 20 10 0 600 500 400 300 200 100 0 1400 1200 1000 800 600 400 200 0 r g = 20 ? , l = 100 h, v ce = 200v 300 250 200 150 100 50 0 180 160 140 120 100 80 60 40 20 0 1200 1000 800 600 400 200 0 1200 1000 800 600 400 200 0 v ce = 200v l = 100 h r g = 20 ? v ce = 200v l = 100 h r g = 20 ? v ce = 200v v ge = +15v t j = 125c e on2 15a e off 30a e on2 30a e on2 60a e off 60a e off 15a v ce = 200v v ge = +15v r g = 20 ? e on2 15a e off 30a e on2 30a e on2 60a e off 60a e off 15a r g = 20 ? , l = 100 h, v ce = 200v
050-7464 rev a 3-2004 apt60gu30b_s typical performance curves 10 20 30 40 50 60 70 80 90 400 100 50 10 5,000 1,000 500 100 50 10 250 200 150 100 50 0 c, capacitance ( p f) i c , collector current (a) f max , operating frequency (khz) v ce , collector-to-emitter voltage (volts) v ce , collector to emitter voltage figure 17, capacitance vs collector-to-emitter voltage figure 18, minimim switching safe operating area 0 10 20 30 40 50 0 50 100 150 200 250 300 350 i c , collector current (a) figure 20, operating frequency vs collector current t j = 125 c t c = 75 c d = 50 % v ce = 200v r g = 5 ? c ies c oes max max1 max 2 max1 d (on ) r d(off ) f diss cond max 2 on 2 off jc diss jc fmin(f,f) 0.05 f ttt t pp f ee tt p r = = ++ + ? = + ? = c res figure 19b, transient thermal impedance model 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm z jc , thermal impedance (c/w) 0.3 0.9 0.7 0.1 0.05 0.5 single pulse rectangular pulse duration (seconds) figure 19a, maximum effective transient thermal impedance, junction-to-case vs pulse duration 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 0.0218 0.119 0.160 0.00450f 0.0119f 0.121f power (watts) junction temp. ( c) rc model case temperature
050-7464 rev a 3-2004 apt60gu30b_s figure 22, turn-on switching waveforms and definitions figure 23, turn-off switching waveforms and definitions *driver same type as d.u.t. i c v clamp 100uh v test a a b d.u.t. driver* v ce figure 24, e on1 test circuit apt?s products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign pat ents pending. all rights reserved. i c a d.u.t. apt15ds30 v ce figure 21, inductive switching test circuit v cc 90% collector current 0 90% 10% t f switching energy t d(off) t j = 125 c gate voltage collector voltage collector current collector voltage gate voltage t j = 125 c 5 % 5% 10% 10% t d(on) 90% t r switching energy 15.95 (.628) 16.05 (.632) 1.22 (.048) 1.32 (.052) 5.45 (.215) bsc {2 plcs.} 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105) 2.84 (.112) 0.46 (.018) 0.56 (.022) dimensions in millimeters (inches) heat sink (collector) and leads are plated 3.81 (.150) 4.06 (.160) (base of lead) collector (heat sink) 1.98 (.078) 2.08 (.082) gate collector emitter 0.020 (.001) 0.178 (.007) 1.27 (.050) 1.40 (.055) 11.51 (.453) 11.61 (.457) 13.41 (.528) 13.51 (.532) revised 8/29/97 1.04 (.041) 1.15 (.045) 13.79 (.543) 13.99 (.551) revised 4/18/95 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 3.50 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) collector collector emitter gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. to - 247 package outline d 3 pak package outline
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